Kageshima, Hiroyuki https://orcid.org/0000-0003-3136-2525
Seo, InSung
Akiyama, Toru https://orcid.org/0000-0002-2800-2011
Shiraishi, Kenji https://orcid.org/0000-0001-5641-6986
Article Title: First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2026 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2025-12-11
Date Accepted: 2026-01-25
Online publication date: 2026-02-12