Borga, Matteo https://orcid.org/0000-0003-3087-6612
Mukherjee, Kalparupa https://orcid.org/0000-0003-1387-3321
De Santi, Carlo https://orcid.org/0000-0001-6064-077X
Stoffels, Steve
Geens, Karen
You, Shuzhen
Bakeroot, Benoit https://orcid.org/0000-0003-4392-1777
Decoutere, Stefaan
Meneghesso, Gaudenzio https://orcid.org/0000-0002-6715-4827
Zanoni, Enrico
Meneghini, Matteo https://orcid.org/0000-0003-2421-505X
Funding for this research was provided by:
Electronic Components and Systems for European Leadership (826392)
Università degli Studi di Padova (NoveGaN)
Article Title: Modeling of gate capacitance of GaN-based trench-gate vertical metal-oxide-semiconductor devices
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics
Publication dates
Date Received: 2019-12-05
Date Accepted: 2020-01-16
Online publication date: 2020-02-05