Gong, Maogao
Xing, Kun
Zhang, Yun
Liu, Bin https://orcid.org/0000-0002-9495-6809
Tao, Tao
Xie, Zili
Zhang, Rong
Zheng, Youdou
Funding for this research was provided by:
National Key Research and Development Program of China (2016YFB0400100)
China Postdoctoral Science Foundation (2019M651783)
National Natural Science Foundation of China (61921005)
National Natural Science Foundation of China (61904068)
National Natural Science Foundation of China (61974062)
National Natural Science Foundation of China (61605071)
National Natural Science Foundation of China (61674076)
Natural Science Foundation of Jiangsu Province (BK20180747)
Natural Science Foundation of Jiangsu Province (BE2015111)
Journal title: Applied Physics Express
Article type: lett
Article title: Semi-polar (20–21) InGaN/GaN multiple quantum wells grown on patterned sapphire substrate with internal quantum efficiency up to 52 per cent
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2020-01-21
Date accepted: 2020-08-05
Online publication date: 2020-08-14