Lu, Yu
Zhou, Feng
Xu, Weizong
Wang, Dongsheng
Xia, Yuanyang
Zhu, Youhua
Pan, Danfeng
Ren, Fangfang
Zhou, Dong
Ye, Jiandong
Chen, Dunjun
Zhang, Rong
Zheng, Youdou
Lu, Hai
Funding for this research was provided by:
the National Key R&D Program of China (No.2017YFB0403000)
the Fundamental Research Funds for the Central Universities (021014380154)
the National Nature Science Foundation of China (61921005)
Journal title: Applied Physics Express
Article type: lett
Article title: Multi-aperture anode based AlGaN/GaN Schottky barrier diodes with low turn-on voltage and high uniformity
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2020-07-16
Date accepted: 2020-08-13
Online publication date: 2020-08-27