Gaevski, Mikhail
Mollah, Shahab https://orcid.org/0000-0002-2848-2959
Hussain, Kamal
Letton, Joshua
Mamun, Abdullah
Jewel, Mohi Uddin
Chandrashekhar, MVS
Simin, Grigory
Khan, Asif
Funding for this research was provided by:
National Science Foundation (ECCS Award nos. 1711322 and 1810116)
Army Research Office (W911NF-18-1-0029)
Defense Advanced Research Projects Agency (ONR N00014-18-1-2033)
ASPIRE- University of South Carolina
Multidisciplinary University Research Initiatives
Journal title: Applied Physics Express
Article type: lett
Article title: Ultrawide bandgap Al x Ga1–x N channel heterostructure field transistors with drain currents exceeding 1.3 A mm−1
Copyright information: © 2020 The Japan Society of Applied Physics
Publication dates
Date received: 2020-07-30
Date accepted: 2020-08-23
Online publication date: 2020-09-03