Tachiki, Keita https://orcid.org/0000-0003-0795-0634
Kaneko, Mitsuaki https://orcid.org/0000-0001-5629-0105
Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090
Article Title: Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H2 etching, SiO2 deposition, and interface nitridation
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2020-12-20
Date Accepted: 2021-01-18
Online publication date: 2021-01-29