Wang, Ding
Uesugi, Kenjiro
Xiao, Shiyu
Norimatsu, Kenji
Miyake, Hideto
Funding for this research was provided by:
JSPS KAKENHI (JP16H06415)
MEXT under the “Program for Research and Development of Next-Generation Semiconductor to Realize Energy-Saving Society”
MEXT under the “Program for Building Regional Innovation Ecosystems”
JST CREST (16815710)
Article Title: High-quality AlN/sapphire templates prepared by thermal cycle annealing for high-performance ultraviolet light-emitting diodes
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2020-11-14
Date Accepted: 2021-02-09
Online publication date: 2021-02-23