Morikawa, Soichiro
Ueno, Kohei https://orcid.org/0000-0002-7888-995X
Kobayashi, Atsushi https://orcid.org/0000-0001-5795-6490
Fujioka, Hiroshi
Funding for this research was provided by:
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D (JPMJTM19YA)
Japan Society for the Promotion of Science (JP16H06414)
Article Title: Pulsed sputtering growth of heavily Si-doped GaN (20 2̄ 1) for tunneling junction contacts on semipolar InGaN (20 2̄ 1) LEDs
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-02-24
Date Accepted: 2021-04-08
Online publication date: 2021-05-07