Ando, Yuto https://orcid.org/0000-0001-6516-0900
Deki, Manato
Watanabe, Hirotaka
Taoka, Noriyuki
Tanaka, Atsushi
Nitta, Shugo https://orcid.org/0000-0002-8258-186X
Honda, Yoshio
Yamada, Hisashi https://orcid.org/0000-0001-7850-9964
Shimizu, Mitsuaki
Nakamura, Tohru
Amano, Hiroshi
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology (JPJ005357)
MEXT Program for Creation of Innovative Core Technology for Power Electronics (JPJ009777)
Article Title: Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-04-01
Date Accepted: 2021-06-29
Online publication date: 2021-07-09