Ishida, Takashi
Sakao, Keisuke
Kachi, Tetsu
Suda, Jun
Funding for this research was provided by:
Council for Science, Technology and Innovation
Article Title: Impact of channel mobility on design optimization of 600–3300 V-class high-speed GaN vertical-trench MOSFETs based on TCAD simulation
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-06-26
Date Accepted: 2021-07-27
Online publication date: 2021-08-10