Moges, Kidist http://orcid.org/0000-0003-1844-8535
Hosoi, Takuji http://orcid.org/0000-0003-3716-604X
Shimura, Takayoshi http://orcid.org/0000-0002-8859-7010
Watanabe, Heiji http://orcid.org/0000-0002-7916-3093
Funding for this research was provided by:
Adaptable and Seamless Technology Transfer Program through Target-Driven R and D (JPMJTR21R3)
Article Title: Demonstration of 4H-SiC CMOS circuits consisting of well-balanced n- and p-channel MOSFETs fabricated by ultrahigh-temperature gate oxidation
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-07-05
Date Accepted: 2021-08-10
Online publication date: 2021-08-24