Chen, Xin https://orcid.org/0000-0002-4601-1499
Zhong, Yaozong
Guo, Xiaolu
Yan, Shumeng https://orcid.org/0000-0003-4795-3549
Zhou, Yu
Su, Shuai
Gao, Hongwei
Zhan, Xiaoning
Zhang, Zihui
Bi, Wengang
Sun, Qian
Yang, Hui
Funding for this research was provided by:
the Natural Science Foundation of Jiangsu Province (No. BK20180253)
the Strategic Priority Research Program of CAS (Nos. XDB43000000 and XDB43020200)
Guangdong Province Key-Area Research and Development Program (Nos. 2019B010130001)
the Key Research Program of Frontier Sciences, CAS (Nos. QYZDB-SSW-JSC014 and ZDBS-LY-JSC040)
the Key R&D Program of Jiangsu Province (No. BE2020004-2)
National Natural Science Foundation of China (Nos. 61534007)
Article Title: Influence of traps on the gate reverse characteristics of normally-off high-electron-mobility transistors with regrown p-GaN gate
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-08-11
Date Accepted: 2021-09-16
Online publication date: 2021-09-28