Otsuka, Fumio
Miyamoto, Hironobu
Takatsuka, Akio
Kunori, Shinji
Sasaki, Kohei
Kuramata, Akito
Funding for this research was provided by:
New Energy and Industrial Technology Development Organization (12004)
Article Title: Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2021 The Japan Society of Applied Physics
Publication dates
Date Received: 2021-12-02
Date Accepted: 2021-12-06
Online publication date: 2021-12-15