Rathkanthiwar, Shashwat https://orcid.org/0000-0003-0180-1398
Bagheri, Pegah
Khachariya, Dolar https://orcid.org/0000-0002-8780-4583
Mita, Seiji
Pavlidis, Spyridon
Reddy, Pramod
Kirste, Ronny
Tweedie, James
Sitar, Zlatko
Collazo, Ramón
Funding for this research was provided by:
Air Force Office of Scientific Research (FA9550-17-1-0225)
National Science Foundation (ECCS-1508854)
Army Research Office (W911NF-16-C-0101)
Article Title: Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2022-03-31
Date Accepted: 2022-04-06
Online publication date: 2022-04-14