Hosoi, Takuji https://orcid.org/0000-0003-3716-604X
Ohsako, Momoe
Moges, Kidist https://orcid.org/0000-0003-1844-8535
Ito, Koji https://orcid.org/0000-0002-7229-2722
Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090
Sometani, Mitsuru https://orcid.org/0000-0002-8208-8469
Okamoto, Mitsuo https://orcid.org/0000-0003-3261-8705
Yoshigoe, Akitaka https://orcid.org/0000-0002-6332-7743
Shimura, Takayoshi https://orcid.org/0000-0002-8859-7010
Watanabe, Heiji https://orcid.org/0000-0002-7916-3093
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology (MEXT Program for Creation of Innovative Core Techn)
Article Title: Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2022-03-31
Date Accepted: 2022-05-11
Online publication date: 2022-05-24