Tachiki, Keita https://orcid.org/0000-0003-0795-0634
Mikami, Kyota
Ito, Koji https://orcid.org/0000-0002-7229-2722
Kaneko, Mitsuaki https://orcid.org/0000-0001-5629-0105
Kimoto, Tsunenobu https://orcid.org/0000-0002-6649-2090
Funding for this research was provided by:
Program on Open Innovation Platform with Enterprises, Research Institute and Academia
Article Title: Mobility enhancement in heavily doped 4H-SiC (0001), (112̄0), and (11̄00) MOSFETs via an oxidation-minimizing process
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2022-04-18
Date Accepted: 2022-05-18
Online publication date: 2022-06-09