Yan, Shumeng https://orcid.org/0000-0003-4795-3549
Liu, Jianxun https://orcid.org/0000-0001-8485-166X
Zhou, Yu
Sun, Xiujian
Zhong, Yaozong
Chen, Xin https://orcid.org/0000-0002-4601-1499
Tang, Yongjun
Guo, Xiaolu
Sun, Qian
Yang, Hui
Funding for this research was provided by:
Guangdong Province Key-Area Research and Development Program (2019B090917005)
the National Key R&D Program of China (2021YFB3601600)
the Natural Science Foundation of China (61874131)
the Jiangxi Double Thousand Plan (S2018CQKJ0072)
the Strategic Priority Research Program of CAS (XDB43000000 and XDB43020200)
the Key Research Program of Frontier Sciences, CAS (QYZDB-SSW-JSC014 and ZDBS-LY-JSC040)
the Bureau of International Cooperation, CAS (121E32KYSB20210002)
the Key R&D Program of Jiangsu Province (BE2021051 and BE2020004-2)
the Jiangxi Science and Technology Program (20212BDH80026;)
the Suzhou Science and Technology Program (SJC2021002)
Article Title: Improved minority carrier lifetime in p-type GaN by suppressing the non-radiative recombination process
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2022-05-03
Date Accepted: 2022-05-30
Online publication date: 2022-06-10