Khachariya, Dolar https://orcid.org/0000-0002-8780-4583
Stein, Shane
Mecouch, Will
Breckenridge, M. Hayden
Rathkanthiwar, Shashwat https://orcid.org/0000-0003-0180-1398
Mita, Seiji
Moody, Baxter
Reddy, Pramod
Tweedie, James
Kirste, Ronny
Sierakowski, Kacper
Kamler, Grzegorz
Bockowski, Michal
Kohn, Erhard
Pavlidis, Spyridon
Collazo, Ramón
Sitar, Zlatko
Funding for this research was provided by:
Narodowe Centrum Badań i Rozwoju (TECHMATSTRATEG-III/0003/2019-00)
National Science Foundation (DMR-1508191)
NCSU faculty start-up fund
Department of Energy (DE-AR0000873)
ONRG NICOP (N62909-17-1-2004)
Article Title: Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2022 The Japan Society of Applied Physics
Publication dates
Date Received: 2022-08-19
Date Accepted: 2022-09-04
Online publication date: 2022-09-23