Funding for this research was provided by:
Acquisition, Technology & Logistics Agency (Innovative Science and Technology Initiative for S)
Article Title: Reduction of dislocation density in α-Ga2O3 epilayers via rapid growth at low temperatures by halide vapor phase epitaxy
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2023 The Japan Society of Applied Physics
Publication dates
Date Received: 2023-05-19
Date Accepted: 2023-06-11
Online publication date: 2023-06-23