Kanechika, Masakazu https://orcid.org/0000-0002-9761-8610
Hirata, Takumi
Tokozumi, Tomoya
Kachi, Tetsu https://orcid.org/0000-0002-4300-5720
Suda, Jun https://orcid.org/0000-0002-5453-4943
Funding for this research was provided by:
MEXT “Program for Creation of Innovative Core Technology for Power Electronics” (JPJ009777)
Article Title: Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2023 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2023-10-12
Date Accepted: 2023-11-09
Online publication date: 2023-12-27