Wu, Feihong
Han, Zhao
Liu, Jinyang
Wang, Yuangang
Hao, Weibing
Zhou, Xuanze
Xu, Guangwei
Lv, Yuanjie
Feng, Zhihong
Long, Shibing http://orcid.org/0000-0001-6220-4461
Funding for this research was provided by:
Collaborative Innovation Program of Hefei Science Center, Chinese Academy of Sciences (CAS) under Grant (2022HSC-CIP024)
National Natural Science Foundation of China under Grant nos (61925110)
University of Science and Technology of China (USTC) Research Funds of the Double First-Class Initiative under Grant (YD2100002009)
Article Title: 8.7 A/700 V β-Ga2O3 Schottky barrier diode demonstrated by oxygen annealing combined with self-aligned mesa termination
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2024-01-11
Date Accepted: 2024-02-26
Online publication date: 2024-03-11