Wang, Chengcai
Chen, Junting
Jiang, Zuoheng
Chen, Haohao
Funding for this research was provided by:
National Natural Science Foundation of China
Article Title: Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2024-03-09
Date Accepted: 2024-04-18
Online publication date: 2024-05-09