Ikeyama, Kazuki
Tomita, Hidemoto
Harada, Sayaka
Okawa, Takashi
Liu, Li https://orcid.org/0000-0001-8776-7930
Kawaharamura, Toshiyuki https://orcid.org/0000-0001-9170-8925
Miyake, Hiroki
Nagasato, Yoshitaka
Article Title: Enhanced field-effect mobility (>250 cm2/V·s) in GaN MOSFETs with deposited gate oxides via mist CVD
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2024 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2024-04-25
Date Accepted: 2024-05-16
Online publication date: 2024-06-17