Yoshinaga, Junya https://orcid.org/0009-0002-5892-0419
Iba, Yoshiki
Kubota, Kakeru
Terauchi, Yuma
Okuyama, Takahito
Sasaki, Shogo
Ikenaga, Kazutada https://orcid.org/0000-0002-0755-5872
Onuma, Takeyoshi https://orcid.org/0000-0003-0060-4245
Higashiwaki, Masataka https://orcid.org/0000-0003-2821-3107
Shiina, Kazushige
Koseki, Shuichi
Ban, Yuzaburo
Kumagai, Yoshinao https://orcid.org/0000-0001-8475-9468
Article Title: Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy
Journal Title: Applied Physics Express
Article Type: paper
Copyright Information: © 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd
Publication dates
Date Received: 2025-04-15
Date Accepted: 2025-04-22
Online publication date: 2025-05-20