Wang, Wensheng
Nomura, Kenji
Nakamura, Ko
Eshita, Takashi
Ozawa, Soichiro
Yamaguchi, Hideshi
Takai, Kazuaki
Watanabe, Junichi
Mihara, Satoru
Hikosaka, Yukinobu
Saito, Hitoshi
Kataoka, Yuji
Kojima, Manabu
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Ferroelectric random access memory with high electric properties and high production yield realized by employing an AlOx underlying layer of Pt bottom electrode for a La-doped lead zirconate titanate capacitor
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-07-23
Date accepted: 2018-10-11
Online publication date: 2018-11-19