Noguchi, Munetaka
Iwamatsu, Toshiaki
Amishiro, Hiroyuki
Watanabe, Hiroshi
Miura, Naruhisa
Kita, Koji
Yamakawa, Satoshi
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-08-31
Date accepted: 2019-01-04
Online publication date: 2019-03-04