Endo, Kiyoshi
Kato, Kimihiko
Takenaka, Mitsuru
Takagi, Shinichi
Funding for this research was provided by:
Japan Science and Technology Agency (JPMJCR1332)
Ministry of Education, Culture, Sports, Science and Technology (17H06148)
Article Title: Electrical characteristic of atomic layer deposition La 2 O 3 /Si MOSFETs with ferroelectric-type hysteresis
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2019 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2018-09-27
Date Accepted: 2019-01-11
Online publication date: 2019-02-22