Okumura, Hironori https://orcid.org/0000-0002-5464-9169
Kato, Yuji
Oshima, Takayoshi https://orcid.org/0000-0003-3611-3181
Palacios, Tomás https://orcid.org/0000-0002-2190-563X
Funding for this research was provided by:
Japan Society for the Promotion of Science (16H06424)
Defense Sciences Office, DARPA (DREaM)
Article Title: Demonstration of lateral field-effect transistors using Sn-doped β -(AlGa) 2 O 3 (010)
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2019 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2018-09-14
Date Accepted: 2019-01-16
Online publication date: 2019-03-04