Gao, Shuang
Mizutani, Tomoko
Takeuchi, Kiyoshi
Kobayashi, Masaharu
Hiramoto, Toshiro
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Reduced variability of drain-induced barrier lowering and subthreshold slope at high temperature in bulk and silicon-on-thin-buried-oxide (SOTB) MOSFETs
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-10-01
Date accepted: 2019-01-22
Online publication date: 2019-03-20