Hashimoto, Tadao
Letts, Edward R.
Key, Daryl
Jordan, Benjamin
Funding for this research was provided by:
Advanced Research Projects Agency - Energy (DE-AR0000445)
U.S. Department of Energy (DE-SC0013791)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-12-08
Date accepted: 2019-01-21
Online publication date: 2019-04-16