Uemura, Keisuke
Deki, Manato
Honda, Yoshio
Amano, Hiroshi
Sato, Taketomo
Funding for this research was provided by:
Japan Society for the Promotion of Science (JP16H06421; JP17H03224)
Nagoya University (The joint usage and research program of the Institute of Materials and Systems for Sustainability (IMaSS))
Article Title: Effect of photoelectrochemical etching and post-metallization annealing on gate controllability of AlGaN/GaN high electron mobility transistors
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2019 The Japan Society of Applied Physics
Publication dates
Date Received: 2018-12-18
Date Accepted: 2019-01-22
Online publication date: 2019-05-20