Huang, Tongde
An, Sining
Bergsten, Johan
He, Simon
Rorsman, Niklas
Funding for this research was provided by:
VINNOVA (2016-05190)
National Natural Science Foundation of China (61804077)
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: A power detector based on GaN high-electron-mobility transistors for a gigabit on–off keying demodulator at 90 GHz
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-12-12
Date accepted: 2019-02-14
Online publication date: 2019-05-20