Ohta, Hiroshi
Asai, Naomi
Horikiri, Fumimasa
Narita, Yoshinobu
Yoshida, Takehiro
Mishima, Tomoyoshi
Article Title: 4.9 kV breakdown voltage vertical GaN p–n junction diodes with high avalanche capability
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2019 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2018-11-06
Date Accepted: 2019-02-19
Online publication date: 2019-04-16