Rudinsky, Mikhail
Yakovlev, Eugene
Talalaev, Roman
Novak, Tomas
Kostelnik, Petr
Sik, Jan
Journal title: Japanese Journal of Applied Physics
Article type: paper
Article title: Analysis of strain and dislocation evolution during MOCVD growth of an AlGaN/GaN power high-electron-mobility transistor structure
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-11-24
Date accepted: 2019-03-13
Online publication date: 2019-05-29