Tanaka, Ryo https://orcid.org/0000-0002-4058-7649
Takashima, Shinya
Ueno, Katsunori
Matsuyama, Hideaki
Edo, Masaharu
Article Title: Demonstration of 1200 V/1.4 mΩ cm 2 vertical GaN planar MOSFET fabricated by an all ion implantation process
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-09-30
Date Accepted: 2019-12-18
Online publication date: 2020-01-27