Magari, Yusaku https://orcid.org/0000-0001-9655-4283
Aman, S G Mehadi https://orcid.org/0000-0003-2275-3751
Koretomo, Daichi https://orcid.org/0000-0003-1885-0495
Masuda, Kentaro
Shimpo, Kenta
Furura, Mamoru https://orcid.org/0000-0003-1685-3246
Article Title: Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
Journal Title: Japanese Journal of Applied Physics
Article Type: paper
Copyright Information: © 2020 The Japan Society of Applied Physics. All rights, including for text and data mining, AI training, and similar technologies, are reserved.
Publication dates
Date Received: 2019-09-30
Date Accepted: 2019-12-26
Online publication date: 2020-02-28