Akatsuka, Yasuto
Iwayama, Sho
Takeuchi, Tetsuya
Kamiyama, Satoshi
Iwaya, Motoaki
Akasaki, Isamu
Funding for this research was provided by:
Japan Society for the Promotion of Science (KAKENHI for Innovative Areas / 16H0, KAKENHI for Scientific Research A /)
Ministry of Education, Culture, Sports, Science and Technology (Private University Research Brandin, Program for research and developmen)
Journal title: Applied Physics Express
Article type: lett
Article title: Doping profiles in low resistive GaN tunnel junctions grown by metalorganic vapor phase epitaxy
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-11-29
Date accepted: 2019-01-08
Online publication date: 2019-02-01