Ando, Yuji
Kaneki, Shota
Hashizume, Tamotsu
Journal title: Applied Physics Express
Article type: lett
Article title: Improved operation stability of Al2O3/AlGaN/GaN MOS high-electron-mobility transistors grown on GaN substrates
Copyright information: © 2019 The Japan Society of Applied Physics
License information: cc-by Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2018-12-19
Date accepted: 2019-01-11
Online publication date: 2019-01-31