Kanaki, Toshiki
Matsumoto, Shin
Narayananellore, Sai Krishna https://orcid.org/0000-0003-4320-3003
Saito, Hidekazu https://orcid.org/0000-0001-7520-0689
Iwasa, Yoshihiro https://orcid.org/0000-0002-8066-8451
Tanaka, Masaaki
Ohya, Shinobu https://orcid.org/0000-0003-1417-9403
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology (No. 18H03860, No. 16H02095, No. 25000003, No. 26103003)
Core Research for Evolutional Science and Technology (JPMJCR1777)
Journal title: Applied Physics Express
Article type: lett
Article title: Room-temperature side-gate-induced current modulation in a magnetic tunnel junction with an oxide-semiconductor barrier for vertical spin MOSFET operation
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2018-11-04
Date accepted: 2019-01-15
Online publication date: 2019-02-01