Imanishi, Masayuki
Murakami, Kosuke
Yamada, Takumi
Kakinouchi, Keisuke
Nakamura, Kosuke
Kitamura, Tomoko
Okumura, Kanako
Yoshimura, Masashi
Mori, Yusuke
Funding for this research was provided by:
Ministry of the Environment (Project No. J141057005)
Japan Science and Technology Agency (JPMJAL1201)
Journal title: Applied Physics Express
Article type: lett
Article title: Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2019-02-04
Date accepted: 2019-03-07
Online publication date: 2019-03-27