He, Junlei https://orcid.org/0000-0002-1151-8775
Zhong, Yaozong
Zhou, Yu
Guo, Xiaolu
Huang, Yingnan
Liu, Jianxun
Feng, Meixin
Sun, Qian
Ikeda, Masao
Yang, Hui
Funding for this research was provided by:
the National Natural Science Foundation of China (61534007)
the National Natural Science Foundation of China (61604168)
the National Natural Science Foundation of China (61775230)
the National Natural Science Foundation of China (61804162)
the National Natural Science Foundation of China (61874131)
the Key Frontier Scientific Research Program of the Chinese Academy of Sciences (QYZDB-SSW-JSC014)
the CAS Interdisciplinary Innovation Team, the Key R&D Program of Jiangsu Province (BE2017079)
the open fund of the State Key Laboratory of Reliability and Intelligence of Electrical Equipment (EERIKF2018001)
the Natural Science Foundation of Jiangsu Province (BK20160401)
the Natural Science Foundation of Jiangsu Province (BK20180253)
the Natural Science Foundation of Jiangxi Province (20181ACB20002)
the Natural Science Foundation of Jiangxi Province (20181BAB211022)
the Suzhou Science and Technology Program (SYG201725)
the Suzhou Science and Technology Program (SYG201846)
the National Key R&D Program (2016YFB0400100)
the National Key R&D Program (2016YFB0400104)
the China Postdoctoral Science Foundation (2018M632408)
Journal title: Applied Physics Express
Article type: lett
Article title: Recovery of p-GaN surface damage induced by dry etching for the formation of p-type Ohmic contact
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2019-01-31
Date accepted: 2019-03-27
Online publication date: 2019-04-10