Li, Baikui
Tang, Xi
Li, Hui
Moghadam, Hamid Amini
Zhang, Zhaofu
Han, Jisheng
Nguyen, Nam-Trung
Dimitrijev, Sima
Wang, Jiannong
Funding for this research was provided by:
National Natural Science Foundation of China (61604098)
Journal title: Applied Physics Express
Article type: lett
Article title: Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs
Copyright information: © 2019 The Japan Society of Applied Physics
Publication dates
Date received: 2019-03-20
Date accepted: 2019-04-18
Online publication date: 2019-05-08