Nakamura, Daisuke
Kimura, Taishi
Horibuchi, Kayo
Funding for this research was provided by:
Ministry of Education, Culture, Sports, Science and Technology (省エネル)
Journal title: Applied Physics Express
Article type: lett
Article title: Halogen-free vapor phase epitaxy for high-rate growth of GaN bulk crystals
Copyright information: © 2017 The Japan Society of Applied Physics
License information: cc-by Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2017-01-24
Date accepted: 2017-03-08
Online publication date: 2017-03-29