He, Yunlong
Wang, Chong
Mi, Minhan
Zhang, Meng
Zhu, Qing
Zhang, Peng
Wu, Ji
Zhang, Hengshuang
Zheng, Xuefeng
Yang, Ling
Duan, Xiaoling
Ma, Xiaohua
Hao, Yue
Funding for this research was provided by:
National Natural Science Foundation of China (61334002)
National Natural Science Foundation of China (61574110)
National Natural Science Foundation of China (61574112)
Journal title: Applied Physics Express
Article type: lett
Article title: Investigation of enhancement-mode AlGaN/GaN nanowire channel high-electron-mobility transistor with oxygen-containing plasma treatment
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-01-06
Date accepted: 2017-03-21
Online publication date: 2017-04-12