Ozaki, Shiro
Makiyama, Kozo
Ohki, Toshihiro
Okamoto, Naoya
Kaneki, Shota
Nishiguchi, Kenya
Hara, Naoki
Hashizume, Tamotsu
Journal title: Applied Physics Express
Article type: lett
Article title: Effects of air annealing on DC characteristics of InAlN/GaN MOS high-electron-mobility transistors using atomic-layer-deposited Al2O3
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-02-25
Date accepted: 2017-04-16
Online publication date: 2017-05-11