Wu, Cheng-Hsien
Pan, Chih-Hung
Chen, Po-Hsun
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Shih, Chih-Cheng
Chi, Ting-Yang
Chu, Tian-Jian
Wu, Jia-Ji
Du, Xiaoqin
Zheng, Hao-Xuan
Sze, Simon M.
Funding for this research was provided by:
Ministry of Science and Technology, Taiwan (MOST-103-2112-M-110 -011 -MY3)
Journal title: Applied Physics Express
Article type: lett
Article title: Inert Pt electrode switching mechanism after controlled polarity-forming process in In2O3-based resistive random access memory
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-07-01
Date accepted: 2017-08-16
Online publication date: 2017-08-31