Akyol, Fatih
Zhang, Yuewei
Krishnamoorthy, Sriram
Rajan, Siddharth
Funding for this research was provided by:
National Science Foundation (ECCS-1408416)
Journal title: Applied Physics Express
Article type: lett
Article title: Ultralow-voltage-drop GaN/InGaN/GaN tunnel junctions with 12% indium content
Copyright information: © 2017 The Japan Society of Applied Physics
Publication dates
Date received: 2017-09-05
Date accepted: 2017-10-18
Online publication date: 2017-11-07