Joishi, Chandan
Rafique, Subrina
Xia, Zhanbo
Han, Lu
Krishnamoorthy, Sriram
Zhang, Yuewei
Lodha, Saurabh
Zhao, Hongping
Rajan, Siddharth
Funding for this research was provided by:
Defense Threat Reduction Agency (HDTRA11710034)
National Science Foundation (DMR-1755479)
Office of Naval Research (N00014-12-1-0976)
Journal title: Applied Physics Express
Article type: lett
Article title: Low-pressure CVD-grown β-Ga2O3bevel-field-plated Schottky barrier diodes
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2017-12-22
Date accepted: 2018-01-26
Online publication date: 2018-02-14