Dogmus, Ezgi
Zegaoui, Malek
Medjdoub, Farid
Funding for this research was provided by:
Agence Nationale de la Recherche (ANR-16-CE05-0022)
H2020 European Research Council (720527)
Journal title: Applied Physics Express
Article type: lett
Article title: GaN-on-silicon high-electron-mobility transistor technology with ultra-low leakage up to 3000 V using local substrate removal and AlN ultra-wide bandgap
Copyright information: © 2018 The Japan Society of Applied Physics
License information: cc-by Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
Publication dates
Date received: 2018-01-03
Date accepted: 2018-01-19
Online publication date: 2018-02-05