Wong, Man Hoi https://orcid.org/0000-0002-0908-4509
Goto, Ken
Morikawa, Yoji
Kuramata, Akito
Yamakoshi, Shigenobu
Murakami, Hisashi
Kumagai, Yoshinao
Higashiwaki, Masataka
Funding for this research was provided by:
Council for Science, Technology and Innovation (Next-generation power electronics)
Journal title: Applied Physics Express
Article type: lett
Article title: All-ion-implanted planar-gate current aperture vertical Ga2O3 MOSFETs with Mg-doped blocking layer
Copyright information: © 2018 The Japan Society of Applied Physics
Publication dates
Date received: 2018-04-20
Date accepted: 2018-05-02
Online publication date: 2018-05-30